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Human‑made electromagnetic fields: Ion forced‑oscillation and voltage‑gated ion channel dysfunction, oxidative stress and DNA damage (Review)
Viernes 10 de junio de 2022 · 247 lecturas
Human‑made electromagnetic fields: Ion forced‑oscillation and voltage‑gated ion channel dysfunction, oxidative stress and DNA damage (Review)
DIMITRIS J. PANAGOPOULOS1‑3, ANDREAS KARABARBOUNIS4,
IGOR YAKYMENKO5,6 and GEORGE P. CHROUSOS2
Abstract. Exposure of animals/biological samples to
human‑made electromagnetic fields (EMFs), especially in the
extremely low frequency (ELF) band, and the microwave/radio
frequency (RF) band which is always combined with ELF,
may lead to DNA damage. DNA damage is connected with
cell death, infertility and other pathologies, including cancer.
ELF exposure from high‑voltage power lines and complex
RF exposure from wireless communication antennas/devices
are linked to increased cancer risk. Almost all human‑made
RF EMFs include ELF components in the form of modulation,
pulsing and random variability. Thus, in addition to polarization
and coherence, the existence of ELFs is a common feature
of almost all human‑made EMFs. The present study reviews
the DNA damage and related effects induced by human‑made
EMFs. The ion forced‑oscillation mechanism for irregular
gating of voltage‑gated ion channels on cell membranes by
polarized/coherent EMFs is extensively described. Dysfunction
of ion channels disrupts intracellular ionic concentrations,
which determine the cell’s electrochemical balance and
homeostasis. The present study shows how this can result in
DNA damage through reactive oxygen species/free radical
overproduction. Thus, a complete picture is provided of how
human‑made EMF exposure may indeed lead to DNA damage
and related pathologies, including cancer. Moreover, it is
suggested that the non‑thermal biological effects attributed to
RF EMFs are actually due to their ELF components.
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